bc857blp4 document number: ds31361 rev. 5 - 2 1 of 5 www.diodes.com february 2011 ? diodes incorporated bc857blp4 45v pnp small signal s urface mount transistor features ? epitaxial die construction ? ultra-small leadless surface mount package ? ultra-low profile (0.40mm max) ? complementary npn type available (bc847blp4) ? ?lead free?, rohs compliant (note 1) ? halogen and antimony free "green" device (note 2) mechanical data ? case: dfn1006h4-3 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0008 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel bc857blp4-7 f2 7 8 3,000 BC857BLP4-7B f2 7 8 10,000 notes: 1. no purposefully added lead. 2. diodes inc's "green" policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information top view device schematic bottom view f2 = product type marking code dfn1006h4-3 device symbol c e b c e b bc857blp4-7 bc857blp4 -7b top view bar denotes base and emitter side top view dot denotes collector side f2 f2
bc857blp4 document number: ds31361 rev. 5 - 2 2 of 5 www.diodes.com february 2011 ? diodes incorporated bc857blp4 maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -5.0 v collector current i c -100 ma thermal characteristics characteristic symbol value unit power dissipation (note 4) @t a = 25c p d 250 mw thermal resistance, junction to ambient air (note 4) @t a = 25c r ja 500 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic (note 5) symbol min typ max unit test condition collector-base breakdown voltage v ( br ) cbo -50 ? ? v i c = 10 a, i b = 0 collector-emitter breakdown voltage v ( br ) ceo -45 ? ? v i c = 10ma, i b = 0 emitter-base breakdown voltage v ( br ) ebo -5 ? ? v i e = 1 a, i c = 0 dc current gain h fe 220 300 475 ? v ce = -5.0v, i c = -2.0ma collector-emitter saturation voltage v ce(sat) ? -90 -250 -300 -650 mv i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5.0ma base-emitter saturation voltage v be(sat) ? ? -700 -850 ? ? mv i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5.0ma base-emitter voltage v be(on) -600 ? -670 -710 -750 -820 mv v ce = -5.0v, i c = -2.0ma v ce = -5.0v, i c = -10ma collector-cutoff current i cbo ? ? ? ? -15 -4.0 na a v cb = -30v v cb = -30v, t a = 150c gain bandwidth product f t 100 ? ? mhz v ce = -5.0v, i c = -10ma, f = 100mhz collector-base capacitance c cbo ? 3.0 ? pf v cb = -10v, f = 1.0mhz notes: 4. device mounted on fr-4 pcb, pad layout as shown on diodes inc. suggested pad layout do cument ap02001 on our website a t http://www.diodes.com 5. short duration pulse test used to minimize self-heating effect.
bc857blp4 document number: ds31361 rev. 5 - 2 3 of 5 www.diodes.com february 2011 ? diodes incorporated bc857blp4 0 50 100 0 255075100125150 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 power derating curve a 150 200 250 300 r = 500 c/w ja -v , collector-emitter voltage (v) ce -i , c o lle c t o r c u r r en t (a) c fig. 2 typical collector current vs. collector-emitter voltage 012345 0 20 40 60 80 100 i = -0.1ma b i = -0.2ma b i = -0.3ma b i = -0.4ma b i = -0.5ma b 0 100 200 300 400 500 1 10 100 1,000 i , collector current (a) c v , collector-emitter saturation voltage (v) ce(sat) fig. 4 typical collector-emitter saturation voltage vs. collector current 0 0.1 0.2 0.3 0.1 1 10 100 i , collector current (a) c v , base-emitter turn-on voltage (v) be(on) fig. 5 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 fig. 6 typical base-emitter saturation voltage vs. collector current i , collector current (a) c v , base-emitter saturation voltage (v) be(sat) 0.1 1 10 100
bc857blp4 document number: ds31361 rev. 5 - 2 4 of 5 www.diodes.com february 2011 ? diodes incorporated bc857blp4 package outline dimensions suggested pad layout dfn1006h4-3 dim min max typ a ? 0.40 ? a1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e ? ? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 l2 a1 e b2 l1 l3 d e b1 a y c g1 g2 x x 1 z
bc857blp4 document number: ds31361 rev. 5 - 2 5 of 5 www.diodes.com february 2011 ? diodes incorporated bc857blp4 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
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